BAW resonators with antisymmetric thick electrodes

A method of manufacturing a resonator circuit device, the method comprising:

• forming a piezoelectric layer;
• forming a front-side electrode formed overlying the piezoelectric layer, the front-side electrode having a first connection region and a first resonator region, the front-side electrode having a first thicker portion within a vicinity of the first connection region;
• and
• forming a back-side electrode formed underlying the piezoelectric layer, the back-side electrode having a second connection region and a second resonator region, the back-side electrode having a second thicker portion within a vicinity of the second connection region;
• wherein the front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the first and second resonator regions at least partially overlapping and the first and second connection regions on opposing sides.

A method of manufacturing an RF filter circuit device, the method comprising:

• forming a substrate member having a cavity region;
• forming a piezoelectric layer formed overlying the substrate member;
• forming a front-side electrode formed overlying the piezoelectric layer, the front-side electrode having a first connection region and a first resonator region, the front-side electrode having a first partial mass-loaded structure configured within a vicinity of the first connection region;
• forming a back-side electrode formed underlying the piezoelectric layer within the cavity region, the back-side electrode having a second connection region and a second resonator region, the back-side electrode having a second partial mass-loaded structure configured within a vicinity of the second connection region;
• wherein the front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the first and second resonator regions at least partially overlapping and the first and second connection regions on opposing sides;
• forming a micro-via configured through a portion of the piezoelectric layer, the micro-via being electrically coupled to the back-side electrode at the second connection region;
• forming a first bond pad electrically coupled to the front-side electrode at the first connection region;
• and
• forming a second bond pad electrically coupled to the back-side electrode through the micro-via.