Air gap type semiconductor device package structure and fabrication method thereof

A method for fabricating a package structure of an air gap type semiconductor device, the method comprising:

• forming a bonding layer on a carrier, wherein the bonding layer contains a first opening there-in;
• attaching a semiconductor chip on the bonding layer, thereby enclosing the first opening to form a first cavity between the semiconductor chip and the carrier, wherein the first cavity is at least aligned with a portion of an active region of the semiconductor chip;
• forming an encapsulation layer on a side of the carrier with the bonding layer, such that the semiconductor chip is encapsulated on the carrier and at least one portion of the encapsulation layer is formed between the semiconductor chip and the carrier along a direction perpendicular to a lateral surface of the carrier;
• forming through holes passing through the carrier, wherein each through hole is at least aligned with a portion of the input/output electrode regions;
• and
• forming interconnection structures on a side of the carrier different from the side with the bonding layer, wherein each interconnection structure passes through a corresponding through hole and is electrically connected to a corresponding input/output electrode in the input/output electrode regions.