Bulk-acoustic wave resonator
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsTae Kyung Lee, Je Hong Kyoung, Sung Sun Kim, Jin Suk Son, Ran Hee Shin, Hwa Sun Lee
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Abstract
A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).
Claims15
A bulk-acoustic wave resonator, comprising:
- a substrate;
- a resonant portion, comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion, and an extension portion that is disposed along a periphery of the center portion;
- and
- an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer,
- wherein the insertion layer is formed of an aluminum alloy containing scandium (Sc).
A bulk-acoustic wave resonator, comprising:
- a substrate;
- a resonant portion, comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate;
- an insertion layer disposed between the piezoelectric layer and the first electrode, and configured to be formed with an aluminum alloy containing scandium in a range of 0.1 at % to 5 at %;
- and
- a seed layer, disposed between the insertion layer and the first electrode, and formed to contain one of a titanium element and a ruthenium material.
Dependencies are inferred from the claim text.