Semiconductor laser diode

A semiconductor laser diode comprising a semiconductor layer sequence having an active layer having a main extension plane and configured, in operation, to generate light in an active region and emit light via a light-outcoupling surface,

• wherein
• the active region extends from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane,
• the semiconductor layer sequence has a surface region on which a first cladding layer is applied in direct contact,
• the first cladding layer comprises a transparent material from a material system different from the semiconductor layer sequence,
• the first cladding layer is structured and has a first structure,
• the surface region has at least one first surface partial region and at least one second surface partial region immediately adjacent thereto,
• the first cladding layer in the second surface partial region has a void formed by an opening or gap,
• a metallic material is applied in the void, and
• the metallic material in the void extends to the surface region of the semiconductor layer sequence and is in direct contact with the semiconductor layer sequence.