Light emitting diode containing a grating and methods of making the same

A light emitting diode (LED), comprising:

• a n-doped semiconductor material layer;
• a p-doped semiconductor material layer;
• an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer;
• and
• a photonic crystal grating configured to increase the light extraction efficiency of the LED, wherein the LED has a width of 100 microns or less, the grating comprises nanostructures configured to guide the light emitted from the active region in a direction substantially perpendicular to a plane of the active region, and the nanostructures are located between the n-doped semiconductor material layer and the active region.

A light emitting diode (LED), comprising:

• a n-doped semiconductor material layer;
• a p-doped semiconductor material layer;
• an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer;
• a buffer semiconductor layer, wherein the n-doped semiconductor material layer is located between the active region and the buffer semiconductor layer, and
• a photonic crystal grating configured to increase the light extraction efficiency of the LED, wherein the LED has a width of 100 microns or less, the grating comprises nanostructures configured to guide the light emitted from the active region in a direction substantially perpendicular to a plane of the active region, and the nanostructures are located on a lower surface of the buffer semiconductor layer opposite to an upper surface facing the active region.

A light emitting diode (LED), comprising:

• a n-doped semiconductor material layer;
• a p-doped semiconductor material layer;
• an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer;
• a buffer semiconductor layer, wherein the n-doped semiconductor material layer is located between the active region and the buffer semiconductor layer, and
• a photonic crystal grating configured to increase the light extraction efficiency of the LED, wherein the LED has a width of 100 microns or less, the grating comprises nanostructures configured to guide the light emitted from the active region in a direction substantially perpendicular to a plane of the active region, and the nanostructures are located in the buffer semiconductor layer.

A light emitting diode (LED), comprising:

• a n-doped semiconductor material layer;
• a p-doped semiconductor material layer;
• an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer;
• a buffer semiconductor layer, wherein the n-doped semiconductor material layer is located between the active region and the buffer semiconductor layer, and
• a photonic crystal grating configured to increase the light extraction efficiency of the LED, wherein the LED has a width of 100 microns or less, the grating comprises nanostructures configured to guide the light emitted from the active region in a direction substantially perpendicular to a plane of the active region, and the nanostructures are located in the n-doped semiconductor material layer.

A method of forming a light emitting diode (LED), comprising:

• forming a n-doped semiconductor material layer over a substrate;
• forming an active region over the n-doped semiconductor material layer;
• forming a p-doped semiconductor material layer over the active region;
• forming a reflector over the p-doped semiconductor material layer;
• and
• forming a photonic crystal grating configured to increase the light extraction efficiency of the LED, wherein the LED has a width of 100 microns or less.

A method of forming a light emitting diode (LED), comprising:

• forming a n-doped semiconductor material layer over a substrate;
• forming an active region over the n-doped semiconductor material layer;
• forming a p-doped semiconductor material layer over the active region;
• forming a reflector over the p-doped semiconductor material layer;
• and
• forming a photonic crystal grating configured to increase the light extraction efficiency of the LED, wherein the LED has a width of 100 microns or less, wherein the grating comprises nanostructures configured to guide the light emitted from the active region in a direction substantially perpendicular to a plane of the active region, and the nanostructures are located between the n-doped semiconductor material layer and the active region.

A method of forming a light emitting diode (LED), comprising:

• forming a n-doped semiconductor material layer over a substrate;
• forming an active region over the n-doped semiconductor material layer;
• forming a p-doped semiconductor material layer over the active region;
• forming a reflector over the p-doped semiconductor material layer;
• forming a photonic crystal grating configured to increase the light extraction efficiency of the LED, wherein the LED has a width of 100 microns or less, wherein the grating comprises nanostructures configured to guide the light emitted from the active region in a direction substantially perpendicular to a plane of the active region;
• and
• forming a buffer semiconductor layer, such that the n-doped semiconductor material layer is formed over an upper surface of the buffer semiconductor layer,
• wherein the nanostructures are located on a lower surface of the buffer semiconductor layer opposite to the upper surface, in the buffer semiconductor layer, or in the n-doped semiconductor material layer.