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US 11,695,099 B2Granted
Contact for a semiconductor light emitting device
AssigneeLumileds LLC
InventorsJohn E. Epler, Aurelien J. F. David
Life of this patent
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Abstract
Embodiments of the invention include a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A contact disposed on the p-type region includes a transparent conductive material in direct contact with the p-type region, a reflective metal layer, and a transparent insulating material disposed between the transparent conductive layer and the reflective metal layer. In a plurality of openings in the transparent insulating material, the transparent conductive material is in direct contact with the reflective metal layer.
Claims7
A device comprising:
- a semiconductor structure comprising a light emitting layer between an n-type region and a p-type region;
- and
- a contact on a surface of the p-type region that is opposite the light emitting layer, the contact including:
- a silver conductive layer comprising a plurality of round isolated islands that are spaced up to 1 micron apart, each of the plurality of round isolated islands is in direct electrical contact with the surface of the p-type region that is opposite the light emitting layer,
- a metal layer,
- a low loss material directly between the silver conductive layer and the metal layer, and
- a plurality of openings in the low loss material, portions of the metal layer extending through the plurality of openings in the low loss material and in direct contact with one or more of the plurality of round isolated islands of the silver conductive layer.
4 more elements
Dependencies are inferred from the claim text.