High voltage light-emitting diode and method of producing the same

A light-emitting diode (LED) sub-chip, comprising:

• an epitaxial layer disposed on a growth substrate, wherein the epitaxial layer comprises a plurality of electrodes;
• a first groove disposed between the LED sub-chip and a second LED sub-chip and a second groove disposed between the LED sub-chip and a third LED sub-chip, wherein the first and second grooves respectively penetrate through the epitaxial layer separating the two sub-chips;
• a bridge insulating layer at least partially covering a sidewall of the first groove and a sidewall of the second groove, wherein each sidewall comprises:
• a first surface and a second surface close to the first surface;
• and
• a bridge electrode on the bridge insulating layer, wherein the bridge electrode connects respective electrodes of the two sub-chips at the first surface,
• wherein the first surface is less inclined with respect to a horizontal surface of the growth substrate at locations where the first or second groove is covered by the bridge insulating layer than at locations where the first or second groove is not covered by the bridge insulating layer,
• wherein the second surface sits above the first surface, the first surface is angled with respect to the horizontal surface of the growth substrate within a first range of degree, the second surface is angled with respect to the horizontal surface within a second range of degree, any degree in the first range of degree is greater than any degree in the second range of degree, and the second surface is irregularly roughened,
• wherein a first angle between the first surface of the first groove and a vertical line that is vertical to the horizontal surface is greater than a second angle between the first surface of the second groove and the vertical line.