Integration of III-Nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices
AssigneeKing Abdullah University of Science and Technology
InventorsBoon S. Ooi, Aditya Prabaswara, Bilal Janjua, Tien Khee Ng
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Abstract
A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.
Claims20
A method of delivering light to an application, the method comprising:
- providing a transparent optoelectronic device that includes
- a GaN/InGaN nanowires-LED with embedded InGaN quantum-disks grown on a metallic interlayer predeposited on a substrate, wherein the nanowires-LED includes individual nanowire structures spaced apart to maintain transparency of the optoelectronic device through the substrate, metallic interlayer, and nanowires-LED, and wherein the metallic interlayer is transparent or partially transparent and conducting, and the substrate is transparent or partially transparent to ultra-violet light, visible light or infrared light;
- a transparent metal contact formed atop of the nanowires-LED with transparency of the optoelectronic device maintained across the substrate, metallic interlayer, nanowires-LED, and transparent metal contact;
- a P-contact pad formed atop of the transparent metal contact;
- and
- a N-contact pad formed atop of said metallic interlayer;
- and
- emitting visible wavelength light from the nanowires-LED to the application.
A method of delivering light to an application, the method comprising:
- providing a transparent optoelectronic device that includes
- a substrate which is transparent or partially transparent to ultra-violet light, visible light or infrared light;
- a conducting metallic interlayer deposited on the substrate, with said interlayer being transparent or partially transparent;
- and
- a GaN/InGaN nanowires-LED with embedded InGaN quantum-disks grown on the metallic interlayer, wherein the nanowires-LED includes individual nanowire structures spaced apart to maintain transparency of the optoelectronic device through the substrate, metallic interlayer, and nanowires-LED;
- a transparent metal contact formed atop of the nanowires-LED, with transparency of the optoelectronic device maintained across the substrate, metallic interlayer, nanowires-LED, and transparent metal contact, and
- a P-contact pad formed atop of the transparent metal contact, and
- a N-contact pad formed atop of the metallic interlayer;
- and
- emitting visible wavelength light from the nanowires-LED to the application.
Dependencies are inferred from the claim text.