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US 11,695,093 B2Granted
Superlattice photodetector/light emitting diode
AssigneeAnalog Devices, Inc.
InventorsShrenik Deliwala, Ryan Michael Iutzi
Life of this patent
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Abstract
A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.
Claims22
A semiconductor device having a mesa structure comprising:
- a heterojunction having a bottom side and a top side;
- a support substrate having a top side and a bottom side disposed directly adjacent the top side of the heterojunction;
- an optical substrate having a top side and a bottom side disposed directly adjacent the top side of the support substrate;
- and
- an electrode forming a current injection structure and configured to:
- substantially cover a perimeter on the top side of the optical substrate;
- define an aperture wherein light passes therethrough;
- and
- not cover an area over the heterojunction;
- wherein an area of the optical substrate is larger than the heterojunction thereby covering the top side of the heterojunction in its entirety and is substantially transmissive at a predetermined bandwidth associated with a bandgap of the heterojunction.
7 more elements
A method for making semiconductor device having a mesa structure, the method comprising:
- producing a heterojunction having abottom side and a top side;
- disposing a support substrate having a top side and a bottom side directly adjacent the top side of the heterojunction;
- disposing an optical substrate having a top side and bottom side directly adjacent the top side of the support substrate;
- and
- substantially covering a perimeter of the top side of the optical substrate with an electrode for current injection and configured to:
- define an aperture wherein light passes therethrough;
- and
- not cover an area over the heterojunction;
- wherein an area of the optical substrate is larger than the heterojunction thereby covering the top side of the heterojunction in its entirety and is substantially transmissive at a predetermined bandwidth associated with a bandgap of the heterojunction.
6 more elements
Dependencies are inferred from the claim text.