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US 11,695,088 B2Granted
Self-bypass diode function for gallium arsenide photovoltaic devices
AssigneeUtica Leaseco, LLC
InventorsHui Nie, Brendan M. Kayes, Isik C. Kizilyalli
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Abstract
Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.
Claims18
A method for forming a semiconductor device, the method comprising:
- providing a semiconductor structure, the semiconductor structure including a base layer configured to absorb photons to convert light energy into electrical energy at the device;
- and
- wherein providing the semiconductor structure includes forming an emitter layer in the semiconductor structure, the emitter layer being made of a different material than the base layer and having a higher bandgap than the base layer,
- wherein a p-n junction of the semiconductor structure is formed between the emitter layer and the base layer such that under reverse-bias conditions in the resulting device the p-n junction provides a bypass function using a Zener breakdown effect that breaks down in a controlled manner, and
- wherein the semiconductor structure includes an intermediate layer between the emitter layer and the base layer, the p-n junction being formed between the emitter layer and the intermediate layer, and a heterojunction being formed between the base layer and the intermediate layer.
2 more elements
A method for forming a semiconductor device, the method comprising:
- providing a semiconductor structure including a base layer that absorbs photons to convert light energy into electrical energy at the semiconductor device, with the base layer including a Group III-V compound semiconductor;
- forming the semiconductor structure to include an emitter layer that is made of a different material than the base layer and has a higher bandgap than the base layer;
- forming a p-n junction within the semiconductor structure between the emitter layer and the base layer such that under reverse-bias conditions of the semiconductor device, the p-n junction provides a bypass function using a Zener breakdown effect that breaks down in a controlled manner;
- forming an intermediate layer between the emitter layer and the base layer;
- and
- forming a window layer disposed on a surface of the base layer and away from the emitter layer.
3 more elements
Dependencies are inferred from the claim text.