Oxide thin film transistor, method for manufacturing the same and display device

An oxide thin film transistor, comprising:

• a metal oxide active layer and a source-drain metal layer, which are on a base substrate;
• wherein the metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate;
• the first metal oxide layer is a carrier transport layer;
• the second metal oxide layer is a carrier isolation layer;
• and an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer;
• the source-drain metal layer is at a side of the second metal oxide layer away from the first metal oxide layer;
• a via hole or a blind hole is defined in the second metal oxide layer;
• the via hole or the blind hole extends in a direction perpendicular to the base substrate;
• and the source-drain metal layer is electrically coupled to the first metal oxide layer through the via hole or the blind hole.

A method of manufacturing an oxide thin film transistor, comprising:

• a step of fabricating an active layer;
• a step of fabricating a source-drain metal layer;
• and
• wherein the step of fabricating the active layer, includes:
• fabricating a pattern of a first metal oxide layer through a first patterning process with a target mask;
• and
• fabricating a pattern of a second metal oxide layer through a second patterning process with the target mask;
• wherein an electron transfer rate of the first metal oxide layer is greater than an electron transfer rate of the carrier isolation layer;
• a line width of the first patterning process is greater than a line width of the second patterning process;
• an exposure time of the first patterning process is less than an exposure time of the second patterning process;
• and a developing time of the first patterning process is less than a developing time of the second patterning process.