Integrated assemblies and methods of forming integrated assemblies

An integrated assembly, comprising:

• a first pillar of semiconductor material, the semiconductor material comprising silicon;
• a gating structure extending along a first direction and having a gating region operatively proximate a region of the first pillar;
• a second pillar of the semiconductor material proximate the first pillar;
• an insulative structure extending along a second direction which is substantially orthogonal to the first direction;
• a first bottom electrode coupled with a portion of the first pillar, and a second bottom electrode coupled with a portion of the second pillar;
• the first and second bottom electrodes being configured as first and second angle plates, respectively;
• the second angle plate being substantially a mirror image of the first angle plate;
• the first and second angle plates having horizontal segments adjacent the portions of the first and second pillars, respectively, and having vertical segments extending from the horizontal segments;
• the vertical segments of the first and second angle plates being adjacent lateral sides of the insulative structure;
• first and second leaker-device-structures extending upwardly from the vertical segments of the first and second bottom electrodes, respectively;
• ferroelectric-insulative-material laterally adjacent the first and second leaker-device-structures, laterally adjacent the vertical segments of the first and second bottom electrodes, and over the horizontal segments of the first and second bottom electrodes;
• and
• top-electrode-material over the ferroelectric-insulative-material and directly against the first and second leaker-device-structures.

An integrated assembly, comprising:

• a first pillar of semiconductor material;
• the first pillar comprising a first upper source/drain region and a first channel region under the first upper source/drain region;
• a gating structure extending along a first direction and having a gating region operatively proximate the first channel region;
• a second pillar of the semiconductor material proximate the first pillar;
• the second pillar comprising a second upper source/drain region and a second channel region under the second upper source/drain region;
• an insulative structure extending along a second direction which is substantially orthogonal to the first direction;
• a first bottom electrode coupled with the first upper source/drain region, and a second bottom electrode coupled with the second upper source/drain region;
• the first and second bottom electrodes being configured as first and second angle plates, respectively;
• the second angle plate being substantially a mirror image of the first angle plate;
• the first and second angle plates having horizontal segments adjacent the first and second upper source/drain regions, respectively, and having vertical segments extending upwardly from the horizontal segments;
• the vertical segments of the first and second angle plates being adjacent lateral sides of the insulative structure;
• first and second leaker-device-structures extending upwardly from the vertical segments of the first and second bottom electrodes, respectively;
• ferroelectric-insulative-material laterally adjacent the first and second leaker-device-structures, laterally adjacent the vertical segments of the first and second bottom electrodes, and over the horizontal segments of the first and second bottom electrodes;
• and
• top-electrode-material over the ferroelectric-insulative-material and directly against the first and second leaker-device-structures.

An integrated assembly, comprising:

• pillars arranged in an array;
• the array comprising a row direction and a column direction;
• the pillars having upper source/drain regions, lower source/drain regions, and channel regions between the upper and lower source/drain regions;
• gating structures proximate the channel regions and extending along the row direction;
• conductive structures beneath the pillars and coupled with the lower source/drain regions;
• the conductive structures extending along the column direction;
• insulative structures above the pillars and extending along the column direction;
• each of the insulative structures having a first lateral side and an opposing second lateral side, and being associated with a pair of the columns of the pillars along said first and second lateral sides;
• bottom electrodes coupled with the upper source/drain regions;
• the bottom electrodes being configured as angle plates;
• the angle plates having horizontal segments adjacent the upper source/drain regions and having vertical segments extending upwardly from the horizontal segments;
• the vertical segments being adjacent the lateral sides of the insulative structures;
• the bottom electrodes including a first set adjacent the first lateral sides and a second set adjacent the second lateral sides;
• the first set of the bottom electrodes having their horizontal segments projecting in a first direction from their vertical segments;
• the second set of the bottom electrodes having their horizontal segments projecting in a second direction from their vertical segments;
• the second direction being opposite to the first direction;
• insulative-material over the bottom electrodes;
• top-electrode-material over the insulative-material;
• and
• leaker-device-structures extending between the top-electrode-material and the bottom electrodes.

A method of forming an integrated assembly, comprising:

• forming a construction having an array of pillars comprising semiconductor material;
• the array comprising rows and columns, with the rows extending along a row direction and with the columns extending along a column direction;
• the pillars having upper source/drain regions, lower source/drain regions, and channel regions between the upper and lower source/drain regions;
• the construction including gating structures extending along the row direction and being proximate the channel regions, and including conductive structures extending along the column direction and being coupled with the lower source/drain regions;
• the construction including a first insulative material between the upper source/drain regions of the pillars;
• an upper surface of the construction extending across the first insulative material and across upper surfaces of the upper source/drain regions;
• forming linear structures over the upper surface and extending along the column direction;
• each of the linear structures having a first lateral side and an opposing second lateral side, and being associated with a pair of columns of the pillars along said first and second lateral sides;
• forming bottom-electrode-material along the linear structures;
• patterning the bottom-electrode-material into bottom-electrode-structures;
• the bottom-electrode-structures having first segments along the upper surfaces of the upper source/drain regions and having second segments along the lateral sides of the linear structures;
• forming leaker-device-structures over the bottom-electrode-structures and along the lateral sides of the linear structures;
• forming ferroelectric-insulative-material over regions of the bottom-electrode-structures and adjacent the leaker-device-structures;
• and
• forming top-electrode-material over the ferroelectric-insulative-material and over the leaker-device-structures, the top-electrode-material being directly against the leaker-device-structures.