Gate contact structure for semiconductor device

A semiconductor device, comprising:

• a first quadrant of gate trenches comprising four groups of stripe-shaped gate trenches extending lengthwise in directions which are transverse to one another;
• a second quadrant of gate trenches adjacent the first quadrant of gate trenches and comprising four groups of stripe-shaped gate trenches extending lengthwise in directions which are transverse to one another;
• and
• a first metallization layer comprising a gate contact structure electrically connected to gate electrodes in the gate trenches of the first and the second quadrants, the gate contact structure having a branch which runs along each side of the first and the second quadrants of gate trenches, including a branch between the first and the second quadrants of gate trenches,
• wherein the first metallization layer comprises a first source contact structure and a second source contact structure electrically isolated from the gate contact structure,
• wherein the first source contact structure is positioned above the first quadrant of gate trenches and electrically connected to field electrodes in the gate trenches of the first quadrant of gate trenches,
• wherein the second source contact structure is positioned above the second quadrant of gate trenches and electrically connected to field electrodes in the gate trenches of the second quadrant of gate trenches.

A semiconductor device, comprising:

• a first quadrant of gate trenches comprising four groups of stripe-shaped gate trenches extending lengthwise in directions which are transverse to one another;
• a second quadrant of gate trenches adjacent the first quadrant of gate trenches and comprising four groups of stripe-shaped gate trenches extending lengthwise in directions which are transverse to one another;
• and
• a first metallization layer comprising a gate contact structure electrically connected to gate electrodes in the gate trenches of the first and the second quadrants, the gate contact structure having a branch which runs along each side of the first and the second quadrants of gate trenches, including a branch between the first and the second quadrants of gate trenches,
• wherein the branch of the gate contact structure between the first and the second quadrants of gate trenches is interrupted along the length of the first and the second quadrants of gate trenches.

A semiconductor device, comprising:

• a first group of gate trenches formed in a semiconductor substrate and extending lengthwise in parallel in a first direction, each gate trench of the first group comprising a gate electrode above and electrically isolated from a field electrode;
• a second group of gate trenches formed in the semiconductor substrate and extending lengthwise in parallel in a second direction transverse to the first direction, each gate trench of the second group comprising a gate electrode above and electrically isolated from a field electrode;
• a sensor formed in the semiconductor substrate between the first group of trenches and the second group of trenches;
• and
• a first metallization layer overlying the semiconductor substrate and comprising a source contact structure and a gate contact structure electrically isolated from the source contact structure,
• wherein the gate electrodes of the first group of gate trenches are electrically connected at a same end to a first branch of the gate contact structure which extends lengthwise in a direction orthogonal to the first direction,
• wherein the gate electrodes of the second group of gate trenches are electrically connected at a same end by a second branch of the gate contact structure which extends lengthwise in a direction orthogonal to the second direction,
• wherein the field electrodes of the second group of gate trenches are electrically connected to the source contact structure at an opposite end from which the gate electrodes of the second group are electrically connected to the second branch of the gate contact structure.

A semiconductor device, comprising:

• a first quadrant of gate trenches formed in a semiconductor substrate and comprising four groups of stripe-shaped gate trenches extending lengthwise in directions which are transverse to one another;
• a second quadrant of gate trenches formed in the semiconductor substrate adjacent the first quadrant of gate trenches and comprising four groups of stripe-shaped gate trenches extending lengthwise in directions which are transverse to one another;
• a first metallization layer overlying the semiconductor substrate and comprising a gate contact structure electrically connected to gate electrodes in the gate trenches of the first and the second quadrants, the gate contact structure having a branch which runs along each side of the first and the second quadrants of gate trenches, including a branch between the first and the second quadrants of gate trenches;
• and
• a sensor formed in the semiconductor substrate between the first quadrant of gate trenches and the second quadrant of gate trenches.

A semiconductor device, comprising:

• a quadrant of gate trenches formed in a semiconductor substrate and comprising four groups of stripe-shaped gate trenches extending lengthwise in directions which are transverse to one another;
• and
• a first metallization layer overlying the semiconductor substrate and comprising a gate contact structure electrically connected to gate electrodes in the gate trenches of the quadrant of gate trenches, the gate contact structure having a branch which runs along each side of the quadrant of gate trenches,
• wherein each of the four groups of stripe-shaped gate trenches has a corner region that faces a center of the quadrant of gate trenches and is staggered or off-centered with respect to the corner region of at least two neighboring groups of stripe-shaped gate trenches.