Greyscale lithography for double-slanted gate connected field plate
AssigneeInsyt, Inc.
InventorKedar Patel
Life of this patent
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Abstract
Methods for manufacturing double-slanted gate connected field plates that allow for the simultaneous optimization of electric field distributions between gate and drain terminals and gate and source terminals are described. A technical benefit of manufacturing the double-slanted gate connected field plate using greyscale lithography is that fabrication costs may be substantially reduced by reducing the number of process steps required to form the double-slanted gate connected field plate. The source-side slope and the drain-side slope of the double-slanted gate connected field plate may be concurrently formed with two different slopes or two different step profiles.
Claims9
A method for fabricating a double-sided gate connected field plate using greyscale lithography, comprising:
- depositing a dielectric layer above a surface;
- depositing a layer of photoresist above the dielectric layer;
- forming a profile within the layer of photoresist using greyscale lithography, the profile includes one uniform slope associated with a slope of the double-sided gate connected field plate or one or more steps associated with a staircase of the double-sided gate connected field plate;
- etching a portion of the dielectric layer to transfer the profile from the layer of photoresist to the dielectric layer;
- and
- depositing one or more layers of metal within the etched portion of the dielectric layer to form the double-sided gate connected field plate.
A method for fabricating a field plate using greyscale lithography, comprising:
- depositing a dielectric layer above a surface;
- depositing a layer of photoresist above the dielectric layer;
- forming a profile within the layer of photoresist using greyscale lithography, the profile includes one uniform slope associated with a slope of the field plate or one or more steps associated with a staircase of the field plate;
- etching a portion of the dielectric layer to transfer the profile from the layer of photoresist to the dielectric layer;
- and
- depositing one or more layers of metal within the etched portion of the dielectric layer to form the field plate, the field plate comprises a double-sided gate connected field plate.
Dependencies are inferred from the claim text.