Bottom source/drain etch with fin-cut-last-VTFET
AssigneeInternational Business Machines Corporation
InventorsTao Li, Indira Seshadri, Nelson Felix, Eric Miller
Life of this patent
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Abstract
A technique relates to a semiconductor device. A first epitaxial material is formed under a bottom surface of a set of fins, the first epitaxial material being under fin channel regions of the set of fins. A second epitaxial material is formed adjacent to the first epitaxial material and remote from the fin channel regions, a combination of the first epitaxial material and the second epitaxial material forming a bottom source or drain (source/drain) layer. A top source/drain layer is formed on an upper portion of the set of fins, gate material being disposed around the set of fins between the top source/drain layer and the bottom source/drain layer.
Claims6
A method of forming a semiconductor device, the method comprising:
- forming a set of fins on a substrate, the set of fins and the substrate having a liner, the liner being patterned to expose at least part of the substrate;
- creating an opening underneath the set of fins by etching a portion of the substrate underneath the set of fins;
- and
- forming a source/drain layer in the opening, a portion of the source/drain layer is formed with a tapered profile that narrows in one dimension.
Dependencies are inferred from the claim text.