US 11,695,051 B2 · Gate stacks for FinFET transistors

Abstract

Embodiments herein describe techniques for a semiconductor device including a substrate and a FinFET transistor on the substrate. The FinFET transistor includes a fin structure having a channel area, a source area, and a drain area. The FinFET transistor further includes a gate dielectric area between spacers above the channel area of the fin structure and below a top surface of the spacers; spacers above the fin structure and around the gate dielectric area; and a metal gate conformally covering and in direct contact with sidewalls of the spacers. The gate dielectric area has a curved surface. The metal gate is in direct contact with the curved surface of the gate dielectric area. Other embodiments may be described and/or claimed.

Claims18

Dependent claims

A semiconductor device, comprising:

a substrate;
a FinFET transistor including a fin structure on the substrate, wherein the fin structure includes a channel area, a source area, and a drain area, and the FinFET transistor includes:
a gate dielectric area between spacers, above the channel area of the fin structure, and below a top surface of the spacers, wherein the gate dielectric area has a curved surface with a first thickness closer to a spacer relative to a top surface of the fin structure and a second thickness closer to a center of the gate dielectric area relative to a top surface of the fin structure, and the first thickness is smaller than the second thickness;
and
a metal gate conformally covering and in direct contact with sidewalls of the spacers, and in direct contact with the curved surface of the gate dielectric area.

2 more elements

Dependencies are inferred from the claim text.

Gate stacks for FinFET transistors

Life of this patent

Gate stacks for FinFET transistors

Life of this patent

Abstract

Claims18