Silicon wafer and manufacturing method of the same

A wafer, that is substantially free of crystal-originated-particle defects, comprising:

• a bulk micro defect (BMD) layer in which a ratio of a first average density of oxygen precipitates from a first treatment to a second average density of oxygen precipitates from a second treatment is in a range of about 0.82 to 1.02,
• wherein the first treatment includes heating the wafer at about 1150° C. for 2 minutes and then between about 950 to 1000° C. for 16 hours, and the second treatment includes heating the wafer at about 780° C. for 3 hours and then between about 950 to 1000° C. for 16 hours.

A wafer comprising:

• a bulk micro defect (BMD) layer in which a ratio of a first average density of oxygen precipitates from a first treatment to a second average density of oxygen precipitates from a second treatment is in a range of about 0.74 to 0.95,
• wherein the first treatment includes heating the wafer at about 1150° C. for 2 minutes and then between about 950 to 1000° C. for 16 hours, and the second treatment includes heating the wafer at about 780° C. for 3 hours and then between about 950 to 1000° C. for 16 hours.

A wafer, substantially free of crystal-originated-particle defects, comprising:

• a bulk micro defect (BMD) layer in which a ratio of a first average density of oxygen precipitates from a first treatment to a second average density of oxygen precipitates from a second treatment is in a range of about 0.82 to 1.02,
• wherein the first treatment includes heating a first portion of the wafer at about 1150° C. for 2 minutes and then between about 950 to 1000° C. for 16 hours, and the second treatment includes heating a second portion of the wafer at about 780° C. for 3 hours and then between about 950 to 1000° C. for 16 hours.