Semiconductor device having stacked structure with two-dimensional atomic layer
AssigneeSamsung Electronics Co., Ltd.
InventorsShigenobu Maeda, Seunghan Seo, Yeohyun Sung
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Abstract
A semiconductor device is provided and includes a substrate and a stack on the substrate. The stack includes plural active layers that are vertically stacked and spaced apart from each other, and plural gate electrodes that are on the active layers, respectively, and vertically stacked. Each active layer includes a channel layer under a corresponding one of the gate electrodes, and a source/drain layer disposed at a side of the channel layer and electrically connected to the channel layer. The channel layer is made of a two-dimensional atomic layer of a first material.
Claims10
A semiconductor device comprising:
- a substrate;
- and
- a stack on the substrate,
- wherein the stack includes:
- a plurality of active layers that are vertically stacked and spaced apart from each other;
- and
- a plurality of gate electrodes that are on the plurality of active layers, respectively, and vertically stacked,
- wherein each of the plurality of active layers includes:
- a channel layer under a corresponding one of the plurality of gate electrodes;
- and
- a source/drain layer disposed at a side of the channel layer and electrically connected to the channel layer,
- wherein the channel layer is made of a two-dimensional atomic layer of a first material, and
- wherein the source/drain layer comprises a second material connected to the first material by covalent bonds.
A semiconductor device comprising:
- a substrate;
- a plurality of gate electrodes that are vertically stacked on the substrate and spaced apart from each other;
- a plurality of source/drain layers;
- and
- a plurality of channel layers,
- wherein each of the plurality of channel layers is provided under a corresponding one of the plurality of gate electrodes,
- wherein each of the plurality of channel layers comprises a two-dimensional atomic layer made of a first material,
- wherein each of the plurality of source/drain layers is electrically connected to a corresponding one of the plurality of channel layers, and
- wherein each of the plurality of source/drain layers comprises a second material connected to the first material by covalent bonds.
A semiconductor device comprising:
- a substrate;
- a plurality of gate electrodes that are vertically stacked on the substrate and spaced apart from each other;
- a channel layer between vertically adjacent ones of the plurality of gate electrodes;
- and
- a source/drain layer electrically connected to the channel layer,
- wherein the channel layer comprises a two-dimensional atomic layer made of a first material, and the source/drain layer comprises a second material connected to the first material by covalent bonds.
Dependencies are inferred from the claim text.