Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a first semiconductor region including a first portion and a second portion, the first semiconductor region being of the first conductivity type, the second portion being arranged with the first portion in a first direction;
• a second semiconductor region provided on the first portion and on the second portion, the second semiconductor region being of the first conductivity type, a second direction from the first semiconductor region toward the second semiconductor region being perpendicular to the first direction, an impurity concentration of the first conductivity type in the second semiconductor region being lower than an impurity concentration of the first conductivity type in the first semiconductor region;
• a third semiconductor region provided on a portion of the second semiconductor region, the third semiconductor region being of a second conductivity type and being positioned on the first portion;
• a first electrode provided on the third semiconductor region;
• a fourth semiconductor region provided on another portion of the second semiconductor region, the fourth semiconductor region being of the second conductivity type, being separated from the third semiconductor region, and being positioned on the second portion;
• a fifth semiconductor region provided on a portion of the third semiconductor region, the fifth semiconductor region being of the first conductivity type;
• a first gate electrode opposing the second semiconductor region, the third semiconductor region, and the fifth semiconductor region with a first gate insulating layer interposed in the first direction;
• a sixth semiconductor region provided on a portion of the fourth semiconductor region, the sixth semiconductor region being of the first conductivity type;
• a second gate electrode opposing the second semiconductor region, the fourth semiconductor region, and the sixth semiconductor region with a second gate insulating layer interposed in the first direction;
• a first metal portion extending along the first direction, a portion of the first semiconductor region being provided between the second semiconductor region and the first metal portion, between the first gate electrode and the first metal portion, and between the second gate electrode and the first metal portion, the first metal portion being provided between another portion of the first semiconductor region and the portion of the first semiconductor region in the second direction, the first metal portion directly contacting with the portion of the first semiconductor region and the other portion of the first semiconductor region, a length of the first metal portion in a third direction is longer than a length of the first metal portion in the second direction, the third direction being perpendicular to the first direction and the second direction, a plurality of the first metal portions being provided along a third direction perpendicular to the first direction and the second direction, the plurality of first metal portions being separated from each other;
• a second electrode provided on the fourth semiconductor region;
• and
• a third electrode, the other portion of the first semiconductor region being provided between the first metal portion and the third electrode in the second direction, wherein no metal member is electrically connecting with the third electrode and the first metal portion, a distance between the first metal portion and the first electrode is shorter than a distance between the first metal portion and the third electrode.