US 11,695,039 B2 · Semiconductor device including an active component and a barrier pattern surrounding the active component and method of forming the same

Abstract

Provided are a semiconductor device and method of forming the same. The semiconductor device includes active components and a first barrier pattern. The active components are on a substrate. Each of the active components includes base insulation patterns on the substrate, gate electrodes on the substrate and spaced apart from each other with the base insulation patterns interposed therebetween, a gate dielectric layer on the gate electrodes and the base insulation patterns, a channel pattern on the gate dielectric layer, source electrodes on the channel pattern and spaced apart from each other, a drain electrode on the channel pattern and between the source electrodes, and second insulation patterns between the source electrodes and the drain electrode. The first barrier pattern disposed on the gate dielectric layer surrounds the channel patterns, the source electrodes, the drain electrodes, and the second insulation patterns of each of the active components.

Claims20

Dependent claims

A semiconductor device, comprising:

active components disposed on a substrate, wherein each of the active components comprises:
base insulation patterns disposed on the substrate, extending in a first direction, and spaced apart from each other in a second direction different from the first direction;
gate electrodes disposed on the substrate, extending in the first direction, and spaced apart from each other with the base insulation patterns interposed therebetween;
a gate dielectric layer disposed on the gate electrodes and the base insulation patterns;
a channel pattern disposed on the gate dielectric layer;
source electrodes disposed on the channel pattern and spaced apart from each other;
a drain electrode disposed on the channel pattern and between the source electrodes;
and
second insulation patterns disposed on the channel pattern and between the source electrodes and the drain electrode;
and
a first barrier pattern disposed on the gate dielectric layer and surrounding the channel patterns, the source electrodes, the drain electrodes, and the second insulation patterns in each of the active components.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device including an active component and a barrier pattern surrounding the active component and method of forming the same

Life of this patent

Semiconductor device including an active component and a barrier pattern surrounding the active component and method of forming the same

Life of this patent

Abstract

Claims20