Back to results
US 11,695,037 B2Granted
Semiconductor structure
AssigneeWin Semiconductors Corp.
InventorsJu-Hsien Lin, Jung-Tao Chung, Shu-Hsiao Tsai, Hsi-Tsung Lin, Chen-An Hsieh, Yi-Han Chen, Yao-Ting Shao
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes a substrate, a passive device and an active device over the substrate. The active device is formed in the first region of the substrate, and the passive device is formed in the second region of the substrate. The semiconductor structure further includes a passivation layer that covers the top surface of the passive device. The passivation layer has an opening that exposes the active device.
Claims20
A semiconductor structure, comprising:
- a substrate;
- an active device disposed over the substrate and in a first region of the substrate;
- a passive device disposed over the substrate and in a second region of the substrate;
- and
- a passivation layer covering a top surface of the passive device, wherein the passivation layer has an opening that exposes the active device.
2 more elements
Dependencies are inferred from the claim text.