Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same

A method of forming a capacitor structure, the method comprising:

• forming a lower electrode on a substrate;
• providing a first metal precursor onto the lower electrode to form a first seed layer, the first metal precursor including a first metal and first and second ligands bound to the first metal, the first and second ligands being organic groups;
• substituting the second ligand with a third ligand that has an amino group —NH2 to form a second seed layer including a second metal precursor, and wherein the amino group —NH2 of the third ligand has a size smaller than that of the amino group (—NR1R2) of the second ligand;
• providing a third metal precursor onto the second seed layer to form a third seed layer, the third metal precursor including fourth and fifth ligands, and the third seed layer including the second and third metal precursors;
• performing an oxidation process on the third seed layer to form a dielectric layer;
• and
• forming an upper electrode on the dielectric layer,
• wherein the dielectric layer includes a first portion and a second portion on the first portion, and
• wherein a detection amount of nitrogen in the dielectric layer has a maximum value at a boundary between the first portion and the second portion.

A method of manufacturing a semiconductor device, the method comprising:

• forming gate structures each extending at an upper portion of a substrate in a first direction parallel to an upper surface of the substrate, the gate structures being spaced apart from each other in a second direction parallel to the upper surface of the substrate and intersecting the first direction;
• forming bit line structures spaced apart from each other in the first direction on the gate structures, each of the bit line structures extending in the second direction;
• forming at least one contact plug structure to be adjacent to at least one of the bit line structures;
• and
• forming a capacitor structure to contact an upper surface of the at least one contact plug structure, the capacitor structure including a lower electrode, a dielectric layer, and an upper electrode sequentially stacked,
• wherein forming the capacitor structure includes:
• providing a first metal precursor onto the lower electrode to form a first seed layer, the first metal precursor including a central metal and first and second ligands bound to the first central metal;
• substituting the second ligand with a third ligand including an amino group (—NH2) to form a second seed layer including a second metal precursor, the second ligand including an amino group (—NR1R2, where R1 and R2 are alkyl groups having 1 to 5 carbon atoms that are equal to or different from each other), and the amino group (—NH2) having a size smaller than that of the amino group (—NR1R2);
• providing a third metal precursor onto the second seed layer to form a third seed layer, the third metal precursor including fourth and fifth ligands, and the third seed layer including the second and third metal precursors;
• and
• performing an oxidation process on the third seed layer to form the dielectric layer.