Pixel formation method
AssigneeOmniVision Technologies, Inc.
InventorsHui Zang, Gang Chen
Life of this patent
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Abstract
A method for forming a pixel includes forming, in a semiconductor substrate, a wide trench having an upper depth with respect to a planar top surface of the semiconductor substrate. The method also includes ion-implanting a floating-diffusion region between the planar top surface and a junction depth in the semiconductor substrate. In a cross-sectional plane perpendicular to the planar top surface, the floating-diffusion region has (i) an upper width between the planar top surface and the upper depth, and (ii) between the upper depth and the junction depth, a lower width that exceeds the upper width. Part of the floating-diffusion region is beneath the wide trench and between the upper depth and the junction depth.
Claims19
A method for forming a pixel comprising:
- forming, in a semiconductor substrate, a wide trench having an upper depth with respect to a planar top surface of the semiconductor substrate;
- and
- ion-implanting, between the planar top surface and a junction depth in the semiconductor substrate, a floating-diffusion region having, in a cross-sectional plane perpendicular to the planar top surface, (i) an upper width between the planar top surface and the upper depth, and (ii) between the upper depth and the junction depth, a lower width that exceeds the upper width, part of the floating-diffusion region being beneath the wide trench and between the upper depth and the junction depth.
Dependencies are inferred from the claim text.