Image sensor
AssigneeSK hynix Inc.
InventorJae Hyung Jang
Life of this patent
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Abstract
An image sensor includes a detection region, a first transistor region, and a second transistor region. The detection region including a first demodulation node and a second demodulation node generates a hole current in a substrate, and captures photocharges that are generated by incident light and move by the hole current. The first pixel transistor region including a plurality of transistors is disposed at one side of the detection region, and processes photocharges captured by the first demodulation node. The second pixel transistor region including a plurality of transistors is disposed at other side of the detection region, and processes photocharges captured by the second demodulation node.
Claims20
An image sensor comprising:
- a detection region structured to include a first demodulation node and a second demodulation node to generate an electric current in a substrate and capture photocharges that are generated in response to incident light in the substrate and move along the electric current;
- a first pixel transistor region disposed at one side of the detection region, and configured to include a plurality of transistors processing the photocharges captured by the first demodulation node;
- and
- a second pixel transistor region disposed at other side of the detection region, and configured to include a plurality of transistors processing the photocharges captured by the second demodulation node.
An image sensor comprising:
- a first pixel that is structured to detect light to produce a first pixel output signal;
- and
- a second pixel located contiguous to the first pixel and structured to detect light to produce a second pixel output signal separate from the first pixel output signal,
- wherein each of the first pixel and the second pixel comprises:
- a detection region including a first demodulation node and a second demodulation node and configured to generate an electric current in a substrate and capture photocharges that are generated in response to incident light and move along the electric current;
- a first pixel transistor region disposed at one side of the detection region, and configured to include a plurality of transistors processing the photocharges captured by the first demodulation node;
- and
- a second pixel transistor region disposed at other side of the detection region, and configured to include a plurality of transistors processing the photocharges captured by the second demodulation node,
- wherein the detection region, the first pixel transistor region, and the second pixel transistor region of the first pixel are arranged symmetrical to the detection region, the first pixel transistor region, and the second pixel transistor region of the second pixel with respect to a boundary between the first pixel and the second pixel.
Dependencies are inferred from the claim text.