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US 11,695,012 B2Granted
Semiconductor device and manufacturing method of the same
AssigneeRenesas Electronics Corporation
InventorsTakaaki Tsunomura, Yoshiki Yamamoto, Masaaki Shinohara, Toshiaki Iwamatsu, Hidekazu Oda
Life of this patent
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Abstract
On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions of a MOSFET formed in the SOI region, and no epitaxial layer is formed in source and drain regions of a MOSFET formed in the bulk silicon region. By covering the end portions of the epitaxial layers with silicon nitride films, even when diffusion layers are formed by implanting ions from above the epitaxial layers, it is possible to prevent the impurity ions from being implanted down to a lower surface of a silicon layer.
Claims31
A semiconductor device comprising:
- a first field effect transistor formed at a first region of a semiconductor substrate;
- and
- a second field effect transistor formed at a second region of the semiconductor substrate, the second region being different from the first region,
- wherein, in the first region, a first insulating film is formed on the semiconductor substrate, and a semiconductor layer is formed on the first insulating film,
- wherein the first field effect transistor has:
- a first gate electrode formed on the semiconductor layer via a first gate insulating film;
- a second insulating film formed on a side surface of the first gate electrode, and formed on the semiconductor layer;
- an epitaxial layer formed on the semiconductor layer, which is not covered with the second insulating film, such that the epitaxial layer has an end portion whose thickness is thinner than a thickness of a central portion thereof;
- a third insulating film formed on the side surface of the first gate electrode via the second insulating film such that the third insulating film covers an upper surface of the epitaxial layer in the end portion;
- first source and drain regions formed in at least portions of the epitaxial layer located on both sides of the first gate electrode;
- and
- first extension regions formed in portions of the semiconductor layer, which are covered with the second insulating film and the third insulating film, and respectively connected with the first source and drain regions,
- wherein the third insulating film is in contact with a portion of the side surface of the first gate electrode, which is exposed from the second insulating film,
- wherein the second field effect transistor has:
- a second gate electrode formed on the semiconductor substrate via a second gate insulating film;
- a fourth insulating film formed on a side surface of the second gate electrode, and formed on the semiconductor substrate;
- a fifth insulating film formed on the side surface of the second gate electrode via the fourth insulating film;
- second source and drain regions formed in portions of the semiconductor substrate located on both sides of the second gate electrode;
- and
- second extension regions formed in portions of the semiconductor substrate, which are covered with the fourth insulating film and the fifth insulating film, and respectively connected with the second source and drain regions,
- wherein a thickness of the second gate insulating film of the second field effect transistor is greater than a thickness of the first gate insulating film of the first field effect transistor, and
- wherein the first extension regions are formed in the portions of the semiconductor layer, which are covered with the end portion of the epitaxial layer, the second insulating film and the third insulating film.
19 more elements
A semiconductor device comprising:
- a first field effect transistor formed at a first region of a semiconductor substrate;
- and
- a second field effect transistor formed at a second region of the semiconductor substrate, the second region being different from the first region,
- wherein, in the first region, a first insulating film is formed on the semiconductor substrate, and a semiconductor layer is formed on the first insulating film,
- wherein the first field effect transistor has:
- a first gate electrode formed on the semiconductor layer via a first gate insulating film;
- a second insulating film formed on a side surface of the first gate electrode, and formed on the semiconductor layer;
- an epitaxial layer formed on the semiconductor layer, which is not covered with the second insulating film, such that the epitaxial layer has an end portion whose thickness is thinner than a thickness of a central portion thereof;
- a third insulating film formed on the side surface of the first gate electrode via the second insulating film such that the third insulating film covers an upper surface of the epitaxial layer in the end portion;
- a first diffusion layer formed in at least a portion of the epitaxial layer, the first diffusion layer being to be served as a part of one of a source region of the first field effect transistor and a drain region of the first field effect transistor;
- and
- a first extension region formed in a portion of the semiconductor layer, which is covered with the second insulating film and the third insulating film, and connected with the first diffusion layer, the first extension region being to be served as a part of the one of the source region of the first field effect transistor and the drain region of the first field effect transistor,
- wherein the third insulating film is in contact with a portion of the side surface of the first gate electrode, which is exposed from the second insulating film,
- wherein an impurity concentration of the first diffusion layer is higher than an impurity concentration of the first extension region,
- wherein the second field effect transistor has:
- a second gate electrode formed on the semiconductor substrate via a second gate insulating film;
- a fourth insulating film formed on a side surface of the second gate electrode, and formed on the semiconductor substrate;
- a fifth insulating film formed on the side surface of the second gate electrode via the fourth insulating film;
- a second diffusion layer formed in a portion of the semiconductor substrate, the second diffusion layer being to be served as a part of one of a source region of the second field effect transistor and a drain region of the second field effect transistor;
- and
- a second extension region formed in a portion of the semiconductor substrate, which is covered with the fourth insulating film and the fifth insulating film, and connected with the second diffusion layer, the second extension region being to be served as a part of the one of the source region of the second field effect transistor and the drain region of the second field effect transistor,
- wherein an impurity concentration of the second diffusion layer is higher than an impurity concentration of the second extension region,
- wherein a thickness of the second gate insulating film of the second field effect transistor is greater than a thickness of the first gate insulating film of the first field effect transistor, and
- wherein the first extension region is formed in the portion of the semiconductor layer, which is covered with the end portion of the epitaxial layer, the second insulating film and the third insulating film.
21 more elements
A semiconductor device comprising:
- a first field effect transistor formed at a first region of a semiconductor substrate,
- wherein, in the first region, a first insulating film is formed on the semiconductor substrate, and a semiconductor layer is formed on the first insulating film,
- wherein the first field effect transistor has:
- a first gate electrode formed on the semiconductor layer via a first gate insulating film;
- a second insulating film formed on a side surface of the first gate electrode, and formed on the semiconductor layer;
- an epitaxial layer formed on the semiconductor layer, which is not covered with the second insulating film, such that the epitaxial layer has an end portion whose thickness is thinner than a thickness of a central portion thereof;
- a third insulating film formed on the side surface of the first gate electrode via the second insulating film such that the third insulating film covers an upper surface of the epitaxial layer in the end portion;
- a first diffusion layer formed in at least a portion of the epitaxial layer, the first diffusion layer being to be served as a part of one of a source region of the first field effect transistor and a drain region of the first field effect transistor;
- and
- a first extension region formed in a portion of the semiconductor layer, which is covered with the second insulating film and the third insulating film, and connected with the first diffusion layer, the first extension region being to be served as a part of the one of the source region of the first field effect transistor and the drain region of the first field effect transistor,
- wherein the third insulating film is in contact with a portion of the side surface of the first gate electrode, which is exposed from the second insulating film,
- wherein an impurity concentration of the first diffusion layer is higher than an impurity concentration of the first extension region, and
- wherein the first extension region is formed in the portion of the semiconductor layer, which is covered with the end portion of the epitaxial layer, the second insulating film and the third insulating film.
10 more elements
Dependencies are inferred from the claim text.