Semiconductor device

A method of fabricating a semiconductor device, the method comprising:

• forming a plurality of semiconductor patterns that are vertically spaced apart from each other on a substrate, wherein the plurality of semiconductor patterns include a channel region;
• forming source/drain regions on opposite sides of the channel region;
• forming a gate electrode on the channel region;
• forming a contact hole extending towards the substrate through at least one of the source/drain regions;
• and
• forming a contact plug in the contact hole,
• wherein a bottom surface of the contact plug is lower than a bottom surface of a lowermost portion of the gate electrode, relative to the substrate.

A method of forming a semiconductor device, the method comprising:

• forming an insulating layer on a substrate;
• forming a channel region on the insulating layer;
• forming a gate structure on the insulating layer, the gate structure crossing the channel region and extending in a direction;
• forming source/drain regions on the insulating layer with the gate structure therebetween, wherein the channel region extends between the source/drain regions;
• and
• forming contact plugs electrically connected to the source/drain regions, respectively,
• wherein the channel region comprises a plurality of semiconductor patterns that are vertically spaced apart from each other on the insulating layer,
• the insulating layer comprises first recess regions therein that are adjacent the source/drain regions, respectively, wherein bottom surfaces of the first recess regions are positioned at a level between a top surface of the insulating layer and a bottom surface of the insulating layer that is opposite the top surface and adjacent the substrate, and
• the contact plugs comprise lower portions extending into the first recess regions, respectively, toward the substrate beyond the top surface of the insulating layer having the channel region and the gate structure thereon and beyond a lowermost portion of the gate structure, such that the lower portions of the contact plugs are closer to the substrate than the top surface of the insulating layer.