Method of manufacturing a semiconductor device and a semiconductor device

A semiconductor device, comprising:

• a fin field effect transistor (FinFET) including a fin structure, a source/drain epitaxial layer and a source/drain contact in contact with the first source/drain epitaxial layer;
• an isolation insulating layer from which the fin structure protrudes;
• an insulating cover layer disposed on sides of the fin structure between the isolation insulating layer and the source/drain structure and being in contact with the isolation insulating layer;
• and
• a dielectric layer covering at least sides of the source/drain contact,
• wherein the dielectric layer includes a first dielectric layer in contact with the first and second source/drain contacts and a second dielectric layer disposed on the first dielectric layer and separated from the first and second source/drain contacts by the first dielectric layer.

A semiconductor device, comprising:

• a fin field effect transistor (FinFET) including a fin structure, a source/drain epitaxial layer and a source/drain contact in contact with the first source/drain epitaxial layer;
• an isolation insulating layer from which the fin structure protrudes;
• an insulating cover layer disposed on sides of the fin structure between the isolation insulating layer and the source/drain epitaxial layer and being in contact with the isolation insulating layer;
• and
• an amorphous or polycrystalline semiconductor layer made of Si, SiGe, SiC or Ge and disposed between the isolation insulating layer and the source/drain contact.