Vertical bipolar junction transistor and vertical field effect transistor with shared floating region
AssigneeInternational Business Machines Corporation
InventorsAlexander Reznicek, Ruilong Xie, Jeng-Bang Yau, Bahman Hekmatshoartabari
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Abstract
A semiconductor device or circuit includes a vertical bipolar junction transistor (vBJT) and a vertical filed effect transistor (vFET). The vBJT collector is electrically and/or physically connected to an adjacent vFET source. For example, a vBJT collector and a vFET source may be integrated upon a same semiconductor material substrate or layer. The vFET provides negative feedback for the collector-base voltage and the vBJT emitter and collector allow for low transit times.
Claims19
A semiconductor device comprising:
- a bipolar junction transistor comprising:
- a collector region;
- an emitter region vertically above the collector region;
- and
- an inner base region positioned between the emitter region and the collector region, the base region controlling charge flow from the emitter region to the collector region;
- and
- a field effect transistor comprising:
- a source region electrically connected to the collector region such that all current passing the collector region enters the source region;
- a drain region vertically above the source region;
- a channel region positioned between the drain region and the source region;
- and
- a gate region physically connected to a sidewall of the channel region.
A four-terminal transistor device comprising:
- a bipolar junction transistor comprising:
- a collector region;
- an emitter region vertically above the collector region and electrically connected to a first terminal;
- and
- an inner base region positioned between the emitter region and the collector region, the base region controlling charge flow from the emitter region to the collector region, the base region electrically connected to a second terminal;
- and
- a field effect transistor comprising:
- a source region electrically connected to the collector region such that all current passing the collector region enters the source region;
- a drain region vertically above the source region and electrically connected to a third terminal;
- a channel region positioned between the drain region and the source region;
- and
- a gate region physically connected to a sidewall of the channel region and electrically connected to a fourth terminal.
Dependencies are inferred from the claim text.