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US 11,695,000 B2Granted
Three-dimensional memory devices
AssigneeYangtze Memory Technologies Co., Ltd.
InventorKun Zhang
Life of this patent
Estimating the term…
Abstract
In certain aspects, a three-dimensional (3D) memory device includes a memory stack including interleaved conductive layers and dielectric layers, a plurality of channel structures each extending vertically through the memory stack, a conductive layer in contact with source ends of the plurality of channel structures, a first source contact electrically connected to the channel structures, and a second source contact electrically connected to the channel structures.
Claims18
A three-dimensional (3D) memory device, comprising:
- a memory stack comprising interleaved conductive layers and dielectric layers;
- a plurality of channel structures each extending vertically through the memory stack;
- a conductive layer in contact with source ends of the plurality of channel structures;
- a first type doped semiconductor layer between the memory stack and the conductive layer;
- and
- a second type well in the first type doped semiconductor layer;
- a first source contact electrically connected to the channel structures;
- and
- a second source contact electrically connected to the channel structures.
6 more elements
A three-dimensional (3D) memory device, comprising:
- a first semiconductor structure comprising a peripheral circuit;
- a second semiconductor structure comprising:
- a memory stack comprising interleaved conductive layers and dielectric layers,
- a plurality of channel structures each extending vertically through the memory stack and electrically connected to the peripheral circuit,
- a conductive layer comprising a metal silicide layer and a metal layer electrically connecting the plurality of channel structures,
- a first type doped semiconductor layer between the memory stack and the conductive layer, and
- a second type well in the first type doped semiconductor layer;
- and
- a bonding interface between the first semiconductor structure and the second semiconductor structure.
6 more elements
Dependencies are inferred from the claim text.