Unified semiconductor devices having processor and heterogeneous memories and methods for forming the same

A semiconductor device, comprising:

• a first semiconductor structure comprising an array of NAND memory cells, a first semiconductor layer above and in contact with the array of NAND memory cells, and a first bonding layer comprising a plurality of first bonding contacts, the array of NAND memory cells being above the first bonding layer;
• a second semiconductor structure comprising an array of dynamic random-access memory (DRAM) cells and a second bonding layer comprising a plurality of second bonding contacts;
• and
• a third semiconductor structure comprising a substrate, a processor on the substrate, an array of static random-access memory (SRAM) cells on the substrate and outside of the processor, and a third bonding layer above the processor and the array of SRAM cells, the third bonding layer comprising a plurality of third bonding contacts,
• wherein the first bonding layer is above the third bonding layer,
• the first bonding contacts are in contact with a first set of the third bonding contacts, and
• the second bonding contacts are in contact with a second set of the third bonding contacts.