Sidewall wetting barrier for conductive pillars
AssigneeQUALCOMM Incorporated
InventorsWei Hu, Dongming He, Wen Yin, Zhe Guan, Lily Zhao
Life of this patent
Estimating the term…
Abstract
Disclosed are examples of integrated circuit (IC) structures and techniques to fabricate IC structures. Each IC package may include a die (e.g., a flip-chip (FC) die) and one or more die interconnects to electrically couple the die to a substrate. The die interconnect may include a pillar, a wetting barrier on the pillar, and a solder cap on the wetting barrier. The wetting barrier may be wider than the pillar. The die interconnect may also include a low wetting layer formed on the wetting barrier.
Claims30
An integrated circuit (IC) structure, comprising:
- a die;
- a pillar on the die, a first surface of the pillar facing the die;
- a wetting barrier on a second surface of the pillar, a width of the wetting barrier being greater than a width of the pillar;
- and
- a solder cap on the wetting barrier such that the die is electrically coupled to the solder cap at least through the pillar and the wetting barrier,
- wherein the pillar and the wetting barrier are formed from a same conductive material, and
- wherein the width of the wetting barrier is greater than a width of the solder cap.
A method of fabricating an integrated circuit (IC) structure, the method comprising:
- forming a pillar on a die, a first surface of the pillar facing the die;
- forming a wetting barrier on a second surface of the pillar, a width of the wetting barrier being greater than a width of the pillar;
- and
- forming a solder cap on the wetting barrier such that the die is electrically coupled to the solder cap at least through the pillar and the wetting barrier,
- wherein the pillar and the wetting barrier are formed from a same conductive material, and
- wherein the width of the wetting barrier is greater than a width of the solder cap.
An integrated circuit (IC) package, comprising:
- a substrate comprising a conductive pad;
- and
- an IC structure disposed on the substrate, the IC structure comprising:
- a die;
- a pillar on the die, a first surface of the pillar facing the die;
- a wetting barrier on a second surface of the pillar, a width of the wetting barrier being greater than a width of the pillar;
- and
- a solder cap on the wetting barrier such that the die is electrically coupled to the conductive pad of the substrate at least through the solder cap, the pillar, and the wetting barrier,
- wherein the pillar and the wetting barrier are formed from a same conductive material, and
- wherein the width of the wetting barrier is greater than a width of the solder cap.
Dependencies are inferred from the claim text.