Dielectric molded indium bump formation and INP planarization
AssigneePrinceton Infrared Technologies, Inc.
InventorsMartin H Ettenberg, Michael Lange
Life of this patent
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Abstract
The disclosed technique may be used to electrically and physically connect semiconductor wafers. The wafer may utilize a thick dielectric. Indium bumps may be deposited and patterned in a dielectric film with a small diameter, tall height and substantially uniform in size and shape. The indium can be melted to create small grain size and uniform height bumps. The dielectric film may feature trenches around the indium bumps to prevent shorting of pixels when pressed together.
Claims12
A method of fabricating a semiconductor device, the method comprising:
- depositing a dielectric film having a thickness of greater than 2 micrometers on a semiconductor wafer;
- opening holes through the dielectric film;
- depositing indium or an alloy of indium in the holes;
- melting the indium or alloy of indium deposited in the holes to form indium columns that are uniform in size and shape;
- repeating the depositing and melting of the indium or alloy of indium until the indium columns reach a desired height;
- and
- removing at least a portion of the dielectric film to expose a plurality of substantially uniform indium columns on a surface of the semiconductor wafer having a pitch of less than 15 micrometers.
A method of fabricating a semiconductor device, the method comprising:
- depositing a plurality of metal contacts onto a semiconductor wafer;
- depositing a first dielectric film on the semiconductor wafer;
- planarizing a surface of the first dielectric film;
- opening holes through the first dielectric film;
- depositing a first metal in the holes to form first metal columns such that the top of the first metal columns is flush with the surface of the first dielectric film;
- depositing a second dielectric film having a thickness greater than 2 micrometers on the first dielectric film;
- opening holes in the second dielectric film above the first metal columns
- depositing a second metal in the holes of the second dielectric film;
- melting the second metal deposited in the holes to form second metal columns that are uniform in size and shape;
- repeating the depositing and melting of the second metal until the second metal columns reach a desired height;
- and
- removing at least a portion of the second dielectric film to expose a plurality of substantially uniform second metal columns that are in direct electrical contact with the metal contacts on a surface of the semiconductor wafer, wherein the second metal columns have a pitch of less than 15 micrometers.
A hybridized semiconductor device comprising:
- a first semiconductor wafer comprising:
- a planarized surface;
- a plurality of flat, substantially uniform indium columns deposited on the planarized surface of the first semiconductor wafer and having a pitch of less than 15 micrometers;
- and
- a plurality of trenches surrounding the indium columns bounded by walls of a partially removed dielectric layer in which the indium columns were formed;
- and
- a second semiconductor wafer comprising:
- a planarized surface;
- a plurality of flat, substantially uniform metal columns deposited on the planarized surface of the second semiconductor wafer and having a pitch that matches that of the indium columns deposited on the first semiconductor wafer;
- and
- a plurality of trenches surrounding the metal columns bounded by walls of a partially removed dielectric layer in which the metal columns were formed;
- wherein the hybridized semiconductor device is constructed by pressing the second semiconductor wafer into the first semiconductor wafer such that the metal columns are pressed into the indium columns to establish electrical contact between the first and second semiconductor wafers.
Dependencies are inferred from the claim text.