Isolation structure for bond pad structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSin-Yao Huang, Jeng-Shyan Lin, Shih-Pei Chou, Tzu-Hsuan Hsu
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Abstract
Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a first isolation structure on a first surface of a substrate. A second isolation structure is formed into the first surface of the substrate. Sidewalls of the first isolation structure are disposed laterally between inner sidewalls of the second isolation structure. A bond pad is formed in the substrate such that the second isolation structure continuously laterally wraps around the bond pad.
Claims20
A method for forming a semiconductor structure, the method comprising:
- forming a first isolation structure on a first surface of a substrate;
- forming a second isolation structure into the first surface of the substrate, wherein sidewalls of the first isolation structure are disposed laterally between inner sidewalls of the second isolation structure;
- and
- forming a bond pad in the substrate such that the second isolation structure continuously laterally wraps around the bond pad.
A method for forming a semiconductor structure, the method comprising:
- forming a first isolation structure on a front-side surface of a substrate;
- forming a second isolation structure in the substrate such that the second isolation structure continuously extends from the front-side surface of the substrate to a back-side surface of the substrate, wherein the back-side surface is opposite the front-side surface;
- forming an interconnect structure along the front-side surface of the substrate, wherein the interconnect structure comprises a conductive wire layer disposed within a dielectric structure;
- and
- forming a bond pad within the substrate such that the bond pad extends through the first isolation structure to the conductive wire layer, wherein the bond pad is disposed laterally between inner sidewalls of the second isolation structure, wherein forming the bond pad comprises:
- performing a first etch process on the back-side surface of the substrate to define a bond pad opening in the substrate;
- depositing a first insulator layer on the substrate and lining the bond pad opening;
- performing a second etch process on the substrate and the first insulator layer, thereby expanding the bond pad opening and exposing a surface of the first isolation structure;
- depositing a second insulator layer on the substrate and the first insulator layer, wherein the second insulator layer lines the bond pad opening;
- and
- performing a third etch process on the second insulator layer, the first isolation structure, and the dielectric structure, thereby expanding the bond pad opening and exposing a surface of the conductive wire layer, wherein the bond pad is formed in the bond pad opening, and wherein the second insulator layer is disposed between the bond pad and the substrate.
A semiconductor structure, comprising:
- a substrate having a first surface opposite a second surface;
- a bond pad extending through the substrate;
- a first isolation structure disposed along the first surface of the substrate;
- and
- a second isolation structure disposed within the substrate and laterally wrapped around the bond pad, wherein at least a portion of the first isolation structure is disposed laterally between inner sidewalls of the second isolation structure, and wherein the first isolation structure is laterally offset from the inner sidewalls of the second isolation structure by a non-zero distance.
Dependencies are inferred from the claim text.