Electromagnetic shielding metal-insulator-metal capacitor structure

A semiconductor device, comprising:

• a first metallization layer;
• a second metallization layer formed over the first metallization layer;
• and
• a metal-insulator-metal (MIM) capacitor formed between the first and second metallization layers, the MIM capacitor comprising:
• first, second, and third bottom capacitor electrodes, wherein the second bottom capacitor electrode is electrically floating;
• and
• a top capacitor electrode extending above the first, second, and third bottom capacitor electrodes, wherein the top capacitor electrode is coupled to a ground voltage reference line.

A semiconductor device, comprising:

• a first conducting line in a first metallization layer of a back-end-of-line (BEOL) interconnect structure;
• a metal-insulator-metal (MIM) capacitor, comprising:
• first, second, and third bottom capacitor electrodes, wherein:
• the first and third bottom capacitor electrodes are electrically coupled to first and second source power lines, respectively;
• and
• the second bottom capacitor electrode is electrically floating;
• and
• a top capacitor electrode extending above the first, second, and third bottom capacitor electrodes, wherein the top capacitor electrode is coupled to a ground voltage reference line;
• and
• a second conducting line in a second metallization layer of the BEOL interconnect structure.