Plated pillar dies having integrated electromagnetic shield layers

A method for forming semiconductor dies, the method comprising:

• depositing a metallic seed layer over a frontside of a semiconductor wafer containing non-singulated semiconductor dies, the metallic seed layer contacting die pads on the non-singulated semiconductor dies;
• performing an electroplating process to compile plated pillars on the metallic seed layer and distributed across the frontside of the semiconductor wafer;
• following the electroplating process, removing selected regions of the metallic seed layer to produce electrical isolation gaps around a first pillar type included in the plated pillars, while leaving intact selected portions of the metallic seed layer to yield a wafer-level electromagnetic interference (EMI) shield layer;
• and
• singulating the semiconductor wafer into singulated plated pillar dies each including a die-level EMI shield layer formed from a singulated piece of the wafer-level EMI shield layer and plated pillars of the first pillar type electrically isolated from the die-level EMI shield layer.