Multi-die ultrafine pitch patch architecture and method of making

A method of forming a semiconductor package, comprising:

• disposing a glass patch over a carrier, wherein the glass patch is coupled to the carrier with a first adhesive layer;
• disposing a plurality of through mold vias (TMVs) over the glass patch, wherein the plurality of TMVs surround a cavity that is formed over the glass patch;
• disposing a bridge into the cavity and over the glass patch, wherein the bridge is coupled to the glass patch with an adhesive layer;
• disposing a first encapsulation layer over the glass patch, the bridge, the adhesive layer, and the plurality of TMVs;
• disposing a high-density packaging (HDP) substrate over the bridge and the glass patch, wherein the HDP substrate is conductively coupled to the glass patch with the plurality of TMVs;
• disposing a plurality of dies over the HDP substrate, wherein the HDP substrate includes a plurality of conductive interconnects that conductively couple the plurality of dies to the bridge and the glass patch;
• and
• disposing a second encapsulation layer over the plurality of dies and the HDP substrate.

A semiconductor package, comprising:

• a glass patch over a package substrate, wherein the glass patch includes a plurality of through glass vias (TGVs);
• a bridge over a glass patch, wherein the bridge includes a plurality of through silicon vias (TSVs), and wherein the plurality of TSVs of the bridge are directly coupled to the plurality of TGVs of the glass patch with a plurality of first solder balls;
• a high-density packaging (HDP) substrate over the bridge and the glass patch, wherein the HDP substrate is conductively coupled to the glass patch with a plurality of through mold vias (TMVs), and wherein the HDP substrate has a width that is substantially equal to a width of the glass patch;
• a plurality of dies over the HDP substrate, wherein the HDP substrate includes a plurality of conductive interconnects that conductively couple the plurality of dies to the bridge and the glass patch;
• and
• a first encapsulation layer over the plurality of dies, the HDP substrate, the plurality of TMVs, the bridge, the plurality of first solder balls, the glass patch, and the package substrate, wherein the first encapsulation layer embeds the plurality of dies, the HDP substrate, the plurality of TMVs, the bridge, the plurality of first solder balls, and the glass patch, and wherein the first encapsulation layer has a top surface that is substantially coplanar to top surfaces of the plurality of dies.