Programmable connection segment and method of forming the same

A semiconductor device, comprising:

• a device structure positioned over a substrate, the device structure including devices;
• and
• a wiring structure positioned over the substrate and coupled to at least one of the devices, the wiring structure including metal layers positioned over and coupled to the device structure, conductive lines extending along planes in parallel with a top surface of the substrate, and programmable lines, the programmable lines each including a programmable material having a modifiable resistivity in that the programmable lines each change between being conductive and being non-conductive responsive to a current pattern delivered to the respective programmable line, wherein:
• a first programmable line of the programmable lines is positioned between two first conductive lines of the conductive lines, the first programmable line and the two first conductive lines being disposed side by side within the same one of the planes in parallel with the top surface of the substrate,
• a second programmable line of the programmable lines is positioned between two second conductive lines of the conductive lines, the second programmable line and the two second conductive lines being stacked along a vertical direction;
• and
• a third programmable line of the programmable lines extends through two or more third conductive lines of the conductive lines, the two or more third conductive lines being stacked along the vertical direction and spaced apart from one another by a dielectric layer in the vertical direction.