Semiconductor circuit for memory device and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChin-Ming Fu
Life of this patent
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Abstract
A semiconductor component for a memory device is provided. The semiconductor component comprises a first active region extending in a first direction; a second active region extending in the first direction; a first conductive layer disposed across the first active region and the second active region, in a second direction substantially perpendicular to the first direction; a second conductive layer extending in the first direction; and a first conductive via connecting the first conductive layer and the second conductive layer.
Claims20
A semiconductor component for a memory device, comprising:
- a first conductive layer extending in a first direction;
- a second conductive layer extending in the first direction;
- a first gate region extending in the first direction and disposed between the first conductive layer and the second conductive layer;
- a third conductive layer extending in the first direction;
- a fourth conductive layer extending in a second direction substantially perpendicular to the first direction;
- and
- a fifth conductive layer extending in the second direction, wherein
- a first edge of the first conductive layer is substantially aligned with a first edge of the second conductive layer and a first edge of the third conductive layer;
- the first conductive layer and the second conductive layer are electrically connected through the fourth conductive layer;
- the second conductive layer and the third conductive layer are electrically connected through the fifth conductive layer;
- and
- the first gate region is isolated from the fourth conductive layer.
A semiconductor component for a memory device, comprising:
- a first gate region extending in a first direction;
- a second gate region extending in the first direction;
- a third gate region extending in the first direction;
- a first conductive layer extending in a second direction substantially perpendicular to the first direction;
- and
- a second conductive layer extending in the second direction, wherein
- the first gate region and the second gate region are electrically connected through the first conductive layer;
- and
- the second gate region and the third gate region are electrically connected through the second conductive layer.
A method of forming a semiconductor component for a memory device, comprising:
- forming a substrate;
- forming a first active region and a second active region within the substrate;
- forming a first conductive layer, a second conductive layer, and a third conductive layer extending across the first active region and the second active region at a first elevation level;
- forming a fourth conductive layer and a fifth conductive layer extending perpendicular to the first conductive layer at a second elevation level;
- forming a first conductive via connecting the first conductive layer and the fourth conductive layer;
- forming a second conductive via connecting the second conductive layer and the fourth conductive layer;
- forming a third conductive via connecting the second conductive layer and the fifth conductive layer;
- and
- forming a fourth conductive via connecting the third conductive layer and the fifth conductive layer.
Dependencies are inferred from the claim text.