Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhi-Sheng Zheng, Chih-Lin Wang
Life of this patent
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Abstract
A device comprises a first dielectric layer, a first conductor, a carbon-containing etch stop layer, a second dielectric layer, and a second conductor. The first conductor has a lower portion in the first dielectric layer. The carbon-containing etch stop layer wraps an upper portion of the first conductor. The second dielectric layer is over the carbon-containing etch stop layer. An interface formed by the second dielectric layer and the carbon-containing etch stop layer is higher over the first conductor than over the first dielectric layer. The second conductor is in the second dielectric layer.
Claims20
A device comprising:
- a first dielectric layer;
- a first conductor having a lower portion in the first dielectric layer;
- a carbon-containing etch stop layer wrapping an upper portion of the first conductor;
- a second dielectric layer over the carbon-containing etch stop layer, an interface formed by the second dielectric layer and the carbon-containing etch stop layer being higher over the first conductor than over the first dielectric layer;
- a second conductor in the second dielectric layer;
- and
- a third conductor having a lower portion in the first dielectric layer and an upper portion protruding above the first dielectric layer, the second conductor wrapping the upper portion of the third conductor.
A device comprising:
- a first dielectric layer;
- a first conductor extending through the first dielectric layer;
- a first barrier layer in the first dielectric layer and cupping an underside of the first conductor, the first barrier layer having a top end lower than a top surface of the first conductor;
- a second dielectric layer over the first dielectric layer;
- a second conductor over the first conductor;
- and
- a second barrier layer cupping an underside of the second conductor, the second barrier layer having a bottom end higher than the top end of the first barrier layer by a non-zero distance, wherein the second barrier layer is in contact with a sidewall of the first conductor.
A device comprising:
- a first conductor;
- a first dielectric layer laterally surrounding a lower portion of the first conductor;
- a first barrier layer laterally spacing the lower portion of the first conductor apart from the first dielectric layer;
- an etch stop layer extending over the first barrier layer and laterally surrounding an upper portion of the first conductor;
- and
- a second conductor over the etch stop layer, the second conductor wrapping around the upper portion of the first conductor from a cross-sectional view.
Dependencies are inferred from the claim text.