Semiconductor device and method for producing same

A method for producing a semiconductor device comprising:

• forming a source electrode, a drain electrode, and a gate electrode extending in parallel to each other and in a predetermined first direction on a semiconductor laminated structure including an electron transit layer and an electron supply layer formed on the electron transit layer;
• forming a first insulating layer disposed above the source electrode and the drain electrode and covering the gate electrode;
• forming a conductive film at a position on the first insulating layer opposing an upper surface of the gate electrode, the conductive film including a first side edge and a second side edge, the upper surface of the gate electrode including a third side edge and a fourth side edge with the first side edge corresponding to the third side edge and the second side edge corresponding to the fourth side edge;
• and
• forming a second insulating layer on the first insulating layer such as to cover the conductive film, and further comprising
• a step in which a source via metal, a drain via metal, and a gate via metal for connecting the source electrode, the drain electrode, and the gate electrode respectively to a source wiring, a drain wiring, and a gate wiring formed on the second insulating layer are formed inside an insulating layer between the electrodes and the wirings, and a conductive film via metal for connecting the conductive film to the source wiring is formed inside the second insulating layer;
• and
• a step in which the source wiring, the drain wiring, and the gate wiring extending in parallel to each other are formed on the second insulating layer and in a second direction that is a direction along a front surface of the second insulating layer and is orthogonal to the first direction;
• wherein the conductive film extends in the first direction along the upper surface of the gate electrode, and
• wherein, in plan view, the first side edge projects further outward than the third side edge and the second side edge projects further outward than the fourth side edge, and an amount of projection of the first side edge from the third side edge is not less than 0.3 μm and not more than 0.9 μm and an amount of projection of the second side edge from the fourth side edge is not less than 0.3 μm and not more than 0.9 μm.