Horizontal pitch translation using embedded bridge dies

A method of forming a microelectronic package structure comprising:

• forming a first plurality of features on a surface of a first region of an interconnect bridge comprising a first pitch;
• forming a second plurality of features comprising a second pitch on a surface of a second region of the interconnect bridge, wherein the first pitch is smaller than the second pitch, and wherein the first plurality of features and the second plurality of features are electrically and physically coupled to each other by conductive interconnect structures located in a third region disposed between the first region and the second region, the conductive interconnect structures in direct physical contact with the first plurality of features and the second plurality of features;
• embedding the interconnect bridge into a package substrate;
• attaching a die on a surface of the substrate;
• and
• attaching a plurality of features disposed on the die to the first plurality of features.

A microelectronic system, comprising:

• a board;
• a microelectronic package attached to the board, wherein the microelectronic package comprises:
• a package disposed on a substrate, wherein the package includes a die disposed on a surface of the substrate, wherein the die comprises a plurality of features located in a region of the die;
• an interconnect bridge embedded in the substrate comprising a first region and a second region disposed on a surface of the interconnect bridge, wherein the first region comprises a first plurality of features comprising a first pitch, wherein the second region comprises a second plurality of features comprising a second pitch, wherein the second pitch is greater than the first pitch, and wherein the first plurality of features is coupled to the second plurality of features by conductive traces disposed in a region located between the first plurality of features and the second plurality of features, the conductive interconnect structures in direct physical contact with the first plurality of features and the second plurality of features.