Annular silicon-embedded thermoelectric cooling devices for localized on-die thermal management

A system, comprising:

• a memory;
• and
• an integrated circuit (IC) coupled to the memory, wherein the integrated circuit comprises:
• an IC die comprising a monocrystalline semiconductor material having a first thermal conductivity, the IC die comprising an active layer subject to developing a hot spot during operation of the IC die;
• and
• a thermoelectric cooler (TEC) embedded within the monocrystalline semiconductor material, wherein the TEC has an annular shape that is substantially parallel to the active layer, the TEC comprising a thermoelectric material that is confined between an outer sidewall along an outer perimeter of the TEC and an inner sidewall along an inner perimeter of the TEC wherein the inner sidewall surrounds an interior region, the interior region is located within the inner perimeter of the TEC and directly below the hot spot and comprises the monocrystalline semiconductor material, and wherein the thermoelectric material has a thermal conductivity less than the first thermal conductivity,
• wherein the integrated circuit is coupled to a first power supply, and wherein the TEC is coupled to a second power supply.