Metal gate structure cutting process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Chang-Yun Chang, Ching-Feng Fu, Peng Wang
Life of this patent
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Abstract
A semiconductor device includes a substrate, first and second fins protruding from the substrate, and first and second source/drain (S/D) features over the first and second fins respectively. The semiconductor device further includes an isolation feature over the substrate and disposed between the first and second S/D features, and a dielectric layer disposed on sidewalls of the first and second S/D features and on sidewalls of the isolation feature. A top portion of the isolation feature extends above the dielectric layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- first and second fins protruding from the substrate;
- first and second source/drain (S/D) features over the first and second fins respectively;
- an isolation feature over the substrate and disposed between the first and second S/D features;
- and
- a dielectric layer disposed on sidewalls of the first and second S/D features and on sidewalls of the isolation feature,
- wherein a top portion of the isolation feature extends above the dielectric layer, and wherein the top portion of the isolation feature is below the first and second S/D features.
A semiconductor device, comprising:
- a substrate;
- an isolation structure over the substrate;
- a fin protruding from the substrate and through the isolation structure, wherein the fin is oriented lengthwise generally along a first direction;
- a gate structure over the fin in a channel region and oriented lengthwise generally along a second direction perpendicular to the first direction;
- a source/drain (S/D) feature over the fin in an S/D region;
- and
- an isolation feature dividing the gate structure into two portions and extending generally along the first direction into a region adjacent the S/D feature, wherein in a cross-sectional view perpendicular to the first direction and cutting across the S/D feature and the isolation feature, a bottom surface of the isolation feature is above and distant from a top surface of the isolation structure.
A semiconductor device, comprising:
- a substrate;
- an isolation structure over the substrate;
- a fin protruding from the substrate and through the isolation structure;
- an epitaxial feature over the fin, the epitaxial feature including an upward-facing sidewall and a downward-facing sidewall, the upward-facing sidewall and the downward-facing sidewall intersecting at an edge of the epitaxial feature;
- an isolation feature adjacent to the epitaxial feature, wherein the isolation feature is below the edge of the epitaxial feature;
- and
- a conductive feature in direct contact with the epitaxial feature and the isolation feature.
Dependencies are inferred from the claim text.