Back to results
US 11,694,930 B2Granted
Semiconductor device having buried gate structure and method for fabricating the same
AssigneeSK hynix Inc.
InventorsDong-Soo Kim, Se-Han Kwon
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device includes forming a trench in a substrate, forming a gate dielectric layer on a surface of the trench, forming a lower gate, which partially fills the trench, over the gate dielectric layer, forming a low work function layer over the lower gate, forming a spacer over the low work function layer, etching the low work function layer to be self-aligned with the spacer in order to form vertical gate on both upper edges of the lower gate, and forming an upper gate over the lower gate between inner sidewalls of the vertical gate.
Claims7
A semiconductor device, comprising:
- a gate dielectric layer conformally covering a trench of a substrate;
- a lower gate formed over the gate dielectric layer and partially filling a lower portion of the trench;
- a vertical gate formed on both upper edges of the lower gate;
- an upper gate filled in inner space of the vertical gate;
- a capping layer formed over the upper gate;
- a spacer formed over the vertical gate and formed between the gate dielectric layer and the capping layer;
- and
- a barrier layer between the vertical gate and the lower gate,
- wherein the barrier layer includes material that nitrides a surface of the lower gate.
6 more elements
Dependencies are inferred from the claim text.