Formation method of semiconductor device with contact structures

A method for forming a semiconductor device structure, comprising:

• forming a first source/drain structure and a second source/drain structure over a semiconductor substrate;
• forming a dielectric layer over the first source/drain structure and the second source/drain structure;
• forming a first opening laterally surrounded by the dielectric layer, wherein the first opening is vertically misaligned with the first source/drain structure;
• forming a second opening laterally surrounded by the dielectric layer, wherein the second opening exposes the second source/drain structure;
• forming a first conductive via in the first opening;
• and
• forming a second conductive via in the second opening, wherein a top of the second conductive via is substantially level with a top of the first conductive via.

A method for forming a semiconductor device structure, comprising:

• forming a first source/drain structure and a second source/drain structure over a semiconductor substrate;
• forming a conductive contact electrically connected to the first source/drain structure;
• forming a protective element over the conductive contact;
• forming a first conductive via to penetrate through the protective element and to electrically connect the conductive contact;
• and
• forming a second conductive via electrically connected to the second source/drain structure, wherein the second conductive via is longer than the first conductive via.