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US 11,694,925 B2Granted
Diffusion barrier collar for interconnects
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsRajesh Katkar, Cyprian Emeka Uzoh
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Abstract
Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.
Claims36
A microelectronic assembly comprising:
- a first substrate having a bonding surface and, the first substrate comprising:
- a first insulating material having first and second cavities extending at least partially through a thickness of the first insulating material,
- a first conductive interconnect structure at least partially disposed in the first cavity,
- a second conductive interconnect structure at least partially disposed in the second cavity,
- an embedded barrier interface disposed on the first insulating material and extending from the first conductive interconnect structure to the second conductive interconnect structure, the embedded barrier interface having a thickness thinner than a thickness of the first conductive interconnect structure, and
- a bonding layer over the embedded barrier layer and at least partially defining the bonding surface of the first substrate, the bonding layer extending from the first conductive interconnect structure to the second conductive interconnect structure;
- and
- a second substrate having a bonding surface directly bonded to the bonding surface of the first substrate without an intervening adhesive, the second substrate comprising:
- a second insulating material having a third cavity extending at least partially through a thickness of the second insulating material, and
- a third conductive interconnect structure at least partially disposed in the third cavity, the third conductive interconnect structure directly bonded to the first conductive interconnect structure without an intervening adhesive,
- wherein the embedded barrier interface inhibits diffusion of a material of the third conductive interconnect structure into the first insulating material.
8 more elements
A substrate having a bonding surface, the substrate comprising:
- a first insulating material having first and second cavities extending at least partially through a thickness of the first insulating material;
- a first conductive interconnect structure at least partially disposed in the first cavity, at least a portion of the first conductive interconnect structure comprises a first interconnect pad;
- a second conductive interconnect structure at least partially disposed in the second cavity, at least a portion of the second conductive interconnect structure comprises a second interconnect pad;
- and
- an embedded barrier interface disposed on the first insulating material and extending from the first conductive interconnect structure to the second conductive interconnect structure, the embedded barrier interface having a thickness thinner than a thickness of the first conductive interconnect structure, wherein the embedded barrier interface is spaced from and closer to the bonding surface than to a back side of the first conductive interconnect structure,
- wherein the bonding surface of the substrate is prepared for direct bonding and includes a dielectric surface spaced from the embedded barrier interface, the dielectric surface extending from the first conductive interconnect structure to the second conductive interconnect structure, and
- wherein the embedded barrier interface inhibits diffusion of conductive material into the first insulating material from the bonding surface.
4 more elements
Dependencies are inferred from the claim text.