Semiconductor device having contact plug
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Jia Hsieh, Long-Jie Hong, Chih-Lin Wang, Kang-Min Kuo
Life of this patent
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Abstract
A device includes an isolation structure, a source/drain epi-layer, a contact, a first dielectric layer, and a second dielectric layer. The isolation structure is embedded in a substrate. The source/drain epi-layer is embedded in the substrate and is in contact with the isolation structure. The contact is over the source/drain epi-layer. The first dielectric layer wraps the contact. The second dielectric layer is between the contact and the first dielectric layer. The first and second dielectric layers include different materials, and a portion of the source/drain epi-layer is directly between a bottom portion of the second dielectric layer and a top portion of the isolation structure.
Claims20
A device comprising:
- an isolation structure embedded in a substrate;
- a source/drain epi-layer embedded in the substrate and in contact with the isolation structure;
- a contact over the source/drain epi-layer;
- a first dielectric layer wrapping the contact;
- and
- a second dielectric layer between the contact and the first dielectric layer, wherein the first and second dielectric layers comprise different materials, and a portion of the source/drain epi-layer is directly between the second dielectric layer and the isolation structure.
A device comprising:
- a gate structure over a substrate;
- an isolation structure embedded in the substrate;
- a first source/drain epi-layer and a second source/drain epi-layer on opposite sides of the gate structure, wherein the first source/drain epi-layer is between the gate structure and the isolation structure;
- a contact connected to the first source/drain epi-layer;
- a first dielectric layer surrounding the contact, wherein the first dielectric layer comprises a horizontal portion embedded in the first source/drain epi-layer and a vertical portion extending upward from the horizontal portion, wherein a top surface of the horizontal portion is lower than a top surface of the isolation structure;
- and
- a second dielectric layer between the contact and the first dielectric layer and landing on the horizontal portion of the first dielectric layer.
A device comprising:
- a gate structure over a substrate;
- a first source/drain epi-layer and a second source/drain epi-layer embedded in the substrate and adjacent the gate structure;
- a contact over the first source/drain epi-layer;
- a silicide layer between the first source/drain epi-layer and the contact;
- a first dielectric layer surrounding the contact;
- and
- a second dielectric layer between the contact and the first dielectric layer, wherein a sidewall of the silicide layer is in contact with the first and second dielectric layers.
Dependencies are inferred from the claim text.