Multilevel semiconductor device and structure with oxide bonding
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Deepak C. Sekar, Brian Cronquist
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Abstract
A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the integrated circuits include at least one processor, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.
Claims20
A multi-level semiconductor device, the device comprising:
- a first level comprising integrated circuits;
- a second level comprising a structure designed to conduct electromagnetic waves,
- wherein said second level is disposed above said first level,
- wherein said integrated circuits comprise single crystal transistors;
- and
- an oxide layer disposed between said first level and said second level,
- wherein said integrated circuits comprise at least one processor,
- wherein said second level is bonded to said oxide layer, and
- wherein said bonded comprises oxide to oxide bonds.
A multi-level semiconductor device, the device comprising:
- a first level comprising a structure designed to conduct electromagnetic waves;
- a second level comprising integrated circuits,
- wherein said second level is disposed above said first level,
- wherein said integrated circuits comprise single crystal transistors;
- and
- an oxide layer disposed between said first level and said second level,
- wherein said integrated circuits comprise at least one processor,
- wherein said second level is bonded to said oxide layer, and
- wherein said bonded comprises oxide to oxide bonds.
A multi-level semiconductor device, the device comprising:
- a first level comprising integrated circuits and communication control circuits;
- a second level comprising a plurality of interconnect lines,
- wherein said second level is disposed above said first level,
- wherein said first level comprises a crystalline material;
- and
- an oxide layer disposed between said first level and said second level,
- wherein said second level is bonded to said first level,
- wherein said bonded comprises oxide to oxide bonds;
- and
- at least one electromagnetic wave transmitter.
Dependencies are inferred from the claim text.