Substrate support device, thermal processing apparatus, substrate support method, and thermal processing method
AssigneeSCREEN Holdings Co., Ltd.
InventorScott Prengle
Life of this patent
Estimating the term…
Abstract
A substrate support device relating to technology disclosed in the description of the present application includes: a holding plate for opposing a substrate bowable by being heated by irradiation with flash light; and a plurality of substrate support pins provided on the holding plate and being for supporting the substrate, wherein the plurality of substrate support pins are arranged at locations where a volume of a space between the holding plate and the substrate in an unbowed state and a volume of a space between the holding plate and the substrate in a bowed state are equal to each other. Breakage of the substrate can be suppressed in a case where the substrate is bowed by flash light.
Claims2
A substrate support method comprising the steps of:
- opposing a holding plate on which a plurality of substrate support pins are provided with a substrate bowable by being heated by irradiation with flash light, said plurality of substrate support pins being for supporting said substrate;
- and
- arranging said plurality of substrate support pins at locations where a volume of a space between said holding plate and said substrate in an unbowed state and a volume of a space between said holding plate and said substrate in a bowed state are equal to each other, wherein a distance rpin, in plan view, between each of said substrate support pins and a center portion of said substrate being circular satisfies:
- r
- pin
- =
- 1
- 2
-
- -
- 4
-
- (
- (
- h
- pin
- +
- R
- -
- h
- bow
- -
- (
- V
- flat
- -
- V
- dome
- π
-
- (
- c
- 2
- )
- 2
- )
- )
- 2
- -
- R
- 2
- )
- where hpin is a height of each of said substrate support pins, R is a radius of curvature of said substrate in said bowed state, hbow is a height of said substrate in said bowed state, Dwafer is a diameter of said substrate in said unbowed state, and c is a diameter of said substrate in said bowed state in plan view.
Dependencies are inferred from the claim text.