US 11,694,912 B2 · High pressure and high temperature anneal chamber

Abstract

Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.

Claims20

Dependent claims

A substrate processing chamber for annealing under high pressure at high temperature comprising:

a chamber body enclosing an internal volume;
a substrate support disposed in the internal volume and configured to support a substrate;
a temperature-controlled fluid circuit configured to deliver a processing fluid to the internal volume;
one or more first heaters interfaced with the temperature-controlled fluid circuit and configured to maintain the processing fluid in the temperature-controlled fluid circuit at a temperature above a condensation point of the processing fluid;
and
one or more second heaters interfaced with the chamber body and configured to maintain the processing fluid in the internal volume at a temperature above the condensation point of the processing fluid.

3 more elements

Dependencies are inferred from the claim text.

High pressure and high temperature anneal chamber

Life of this patent

High pressure and high temperature anneal chamber

Life of this patent

Abstract

Claims20